Method for manufacturing bonded substrate and bonded substrate manufactured by the method
US7442623B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jun 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.