Method of polishing a silicon-containing dielectric
US7442645B2 · kind B2 · utility
18Cited by
26References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2004 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jan 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The inventive chemical-mechanical polishing system comprises (a) ceria, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing system has a pH of about 4 to about 6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.