Ion beam implant current, spot width and position tuning
US7442944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2004 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Nov 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.