Thin film semiconductor device
US7442958B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jun 26, 2007 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jul 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.