Method to detect and predict metal silicide defects in a microelectronic device during the manufacture of an integrated circuit
US7443189B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 2, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Sep 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present teachings provide methods for detection of metal silicide defects in a microelectronic device. In an exemplary embodiment, a portion of a semiconductor substrate may be positioned in a field of view of an inspection tool. The method also includes producing (120) a voltage contrast image of the portion, wherein the image is obtained using a collection field that is stronger than an incident field. The method also includes using (130) the voltage contrast image to determine a metal silicide defect in a microelectronic device. Other embodiments include an inspection system (200) for detecting metal silicide defects and a method of manufacturing an integrated circuit (300).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.