Magnetic memory device
US7443718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Nov 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.