Inventor · Tokyo, JP

Riichiro Takemura

134Patents
17h-index
72Co-inventors
85Inventor score

Filing activity: Dec 23, 1999 → Oct 2, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US7759714B2 Semiconductor device Electricity 119 Active
US7123535B2 Semiconductor integrated circuit device Physics 65 Expired
US7468901B2 Semiconductor memory device Physics 65 Active
US7859889B2 Semiconductor memory device Physics 56 Active
US6670642B2 Semiconductor memory device using vertical-channel transistors Electricity 56 Expired
US7489552B2 Semiconductor integrated circuit device Physics 56 Active
US9257483B2 Magnetic memory, method of manufacturing the same, and method of driving the same Electricity 36 Active
US7603592B2 Semiconductor device having a sense amplifier array with adjacent ECC Physics 32 Active
US7098478B2 Semiconductor memory device using vertical-channel transistors Electricity 26 Expired
US7574648B2 Semiconductor device Physics 25 Active
US6212110A Semiconductor memory device Physics 21 Expired
US6477100B2 Semiconductor memory device with over-driving sense amplifier Physics 21 Expired
US6501672B1 Dynamic random access memory (DRAM) capable of canceling out complementary noise developed in plate electrodes of memory cell capacitors Electricity 20 Expired
US7038961B2 Semiconductor device Physics 18 Expired
US6621110B1 Semiconductor intergrated circuit device and a method of manufacture thereof Emerging Cross-Sectional Technologies 18 Expired
US7154788B2 Semiconductor integrated circuit device Physics 18 Expired
US6341088B2 Dynamic random access memory in switch MOSFETs between sense amplifiers and bit lines Physics 17 Expired
US7206216B2 Semiconductor device with a non-erasable memory and/or a nonvolatile memory Physics 17 Expired
US7474550B2 Dynamic RAM-and semiconductor device Electricity 16 Active
US6992343B2 Semiconductor memory device Emerging Cross-Sectional Technologies 16 Expired
US7224629B2 Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with different drivability for each Electricity 14 Expired
US6373776B1 Dynamic ram and semiconductor device Electricity 13 Expired
US6400596B2 Semiconductor memory device using open data line arrangement Electricity 12 Expired
US6426889B2 Semiconductor integrated circuit Electricity 12 Expired
US6882557B2 Semiconductor memory device Electricity 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.