Array of cells including a selection bipolar transistor and fabrication method thereof

US7446011B2 · kind B2 · utility

Inventors

• Fabio Pellizzer · Boise, US
• Giulio Casagrande · Vignate, IT
• Roberto Bez · Milano, IT

Key dates

• Filing date: Oct 19, 2006
• Grant date: Nov 4, 2008
• Expiry date: May 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

A cell array is formed by a plurality of cells each including a selection bipolar transistor and a storage component. The cell array is formed in a body including a common collector region of P type; a plurality of base regions of N type, overlying the common collector region; a plurality of emitter regions of P type formed in the base regions; and a plurality of base contact regions of N type and a higher doping level than the base regions, formed in the base regions, wherein each base region is shared by at least two adjacent bipolar transistors.