Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
US7446037B2 · kind B2 · utility
3Cited by
3References
18Claims
0Family size
Inventors
Key dates
| Filing date | Aug 18, 2005 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jul 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/179
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.