Method for programming a multilevel memory
US7447068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2007 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Apr 6, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted programmed state such that at least one bit of them has a Vt level larger than a second PV level corresponding to a targeted programmed state, wherein the second PV level of the targeted programmed state is larger than the corresponding first PV level; and programming only the bits of the memory with a Vt level lower than the first PV level of the targeted programmed state such that each of them has a Vt level larger than the first PV level of the targeted programmed state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.