Method for the growth of large low-defect single crystals
US7449065B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | May 29, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.