David J. Spry
7Patents
3h-index
14Co-inventors
50Inventor score
Filing activity: Dec 2, 2006 → Jul 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449065B1 | Method for the growth of large low-defect single crystals | Chemistry; Metallurgy | 25 | Active |
| US9013002B1 | Iridium interfacial stack (IRIS) | Electricity | 5 | Active |
| US10490550B1 | Larger-area integrated electrical metallization dielectric structures with stress-managed unit cells for more capable extreme environment semiconductor electronics | Electricity | 3 | Active |
| US10256202B1 | Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits | Electricity | 3 | Active |
| US11004802B1 | Reliability extreme temperature integrated circuits and method for producing the same | Electricity | 1 | Active |
| US11128293B1 | Compensation for device property variation according to wafer location | Electricity | 0 | Active |
| US9978686B1 | Interconnection of semiconductor devices in extreme environment microelectronic integrated circuit chips | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.