Method of polishing a wafer
US7449124B2 · kind B2 · utility
7Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present in the range of 1.5 to 4 percent by weight of the aqueous solution. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.