Phase change memory devices and fabrication methods thereof
US7449360B2 · kind B2 · utility
0Cited by
4References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 23, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Jul 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.