Inventor · Seoul, KR

Dong-Seok Suh

34Patents
5h-index
43Co-inventors
61Inventor score

Filing activity: Mar 4, 2005 → Jan 11, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US8101061B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 22 Active
US7705343B2 Phase change random access memory devices and methods of operating the same Physics 20 Active
US7521704B2 Memory device using multi-layer with a graded resistance change Physics 13 Expired
US7558105B2 Phase change memory devices and multi-bit operating methods for the same Physics 10 Active
US8085583B2 Vertical string phase change random access memory device Physics 8 Active
US7696507B2 Storage nodes, phase change memory devices, and methods of manufacturing the same Electricity 5 Active
US8471232B2 Resistive memory devices including vertical transistor arrays and related fabrication methods Electricity 5 Active
US7872908B2 Phase change memory devices and fabrication methods thereof Emerging Cross-Sectional Technologies 5 Active
US7599216B2 Phase change memory devices and fabrication methods thereof Emerging Cross-Sectional Technologies 4 Active
US8049202B2 Phase change memory device having phase change material layer containing phase change nano particles Emerging Cross-Sectional Technologies 4 Active
US7897030B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 4 Active
US8021524B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 3 Active
US7476892B2 Storage node, phase change memory device and methods of operating and fabricating the same Electricity 2 Active
US7626859B2 Phase-change random access memory and programming method Physics 2 Active
US8017929B2 Phase change material layers and phase change memory devices including the same Electricity 2 Active
US8937711B2 Sensor and method using the same Physics 2 Active
US8083909B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 2 Active
US7541633B2 Phase-change RAM and method for fabricating the same Electricity 2 Active
US8144507B2 Method of measuring a resistance of a resistive memory device Physics 2 Active
US9046358B2 Sensor, method of operating the same, and system including the same Electricity 2 Active
US8080149B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 1 Active
US8066855B2 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states Emerging Cross-Sectional Technologies 1 Active
US7872250B2 Phase-change ram and method for fabricating the same Electricity 1 Active
US8218359B2 Phase change random access memory and methods of manufacturing and operating same Physics 1 Active
US8319291B2 Non-volatile memory device with data storage layer Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.