Patent · US Active

Wafer level packaging cap and fabrication method thereof

US7449366B2 · kind B2 · utility

4Cited by
7References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2006
Grant dateNov 11, 2008
Priority date
Expiry dateJan 30, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16235
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.