Gate dielectric and method
US7449385B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 26, 2002 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Oct 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.