System and method for depth profiling and characterization of thin films
US7449682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2002 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Oct 24, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Characterization of a sample, e.g., a depth profile, may be attained using one or more of the following parameters in an electron spectroscopy method or system. The one or more parameters may include using low ion energy ions for removing material from the sample to expose progressively deeper layers of the sample, using an ion beam having a low ion angle to perform such removal of sample material, and/or using an analyzer positioned at a high analyzer angle for receiving photoelectrons escaping from the sample as a result of x-rays irradiating the sample. Further, a correction algorithm may be used to determine the concentration of components (e.g., elements and/or chemical species) versus depth within the sample, e.g., thin film formed on a substrate. Such concentration determination may include calculating the concentration of components (e.g, elements and/or chemical species) at each depth of a depth profile by removing from depth profile data collected at a particular depth (i.e., the depth for which concentration is to be calculated) concentration contributions attributable to deeper depths of the sample. In addition, characterization of a sample, e.g., determination of a com…
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