Phase-change-type semiconductor memory device
US7449711B2 · kind B2 · utility
9Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Aug 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell includes a chalcogenide element and a diode connected in series, and an n-type contact layer underlying the n-type layer of the diode. Adjacent two of memory cells share a common bit-line contact plug connecting the n-type contact layers and the bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.