Process for fabricating an integrated circuit comprising a photodiode, and corresponding integrated circuit

US7449737B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Damien Lenoble · Wellin, BE
• Francois Roy · Seyssinet-Pariset, FR

Key dates

• Filing date: Jul 5, 2006
• Grant date: Nov 11, 2008
• Expiry date: Aug 4, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

An integrated circuit includes at least one photodiode associated with a transfer transistor. The photodiode is formed with an upper pn junction. The transfer transistor includes a lateral spacer located on a side facing the photodiode. An upper layer of the upper pn junction includes a lateral surface extension lying beneath the spacer. A lower layer of the upper pn junction forms a source/drain region for the transfer transistor. An edge of the lateral surface extension lying beneath the spacer and adjacent a gate of the transfer transistor contacts a substrate of the integrated circuit. An oxide layer insulating the gate from the underlying substrate does not overlie the lateral surface extension of the upper layer underneath of the lateral spacer.