Strain-engineered ferroelectric thin films
US7449738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Feb 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.