Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor

US7449739B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Heitmann · Dresden, DE
• Peter Moll · Dresden, DE
• Odo Wunnicke · Dresden, DE
• Till Schloesser · Dresden, DE

Key dates

• Filing date: Jan 25, 2006
• Grant date: Nov 11, 2008
• Expiry date: Feb 20, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.