Lateral epitaxial GaN metal insulator semiconductor field effect transistor
US7449762B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A Lateral Epitaxial Gallium Nitride metal insulator semiconductor field effect transistor (LEGaN-MISFET) is described that includes a body region including at least one layer formed of Gallium Nitride having a first conductivity type formed on the substrate; a resurf layer of Gallium Nitride having a second conductivity type formed the body region; a source region in contact with the resurf layer; a drain region, in contact with the resurf layer and spaced apart from the source region; a gate metal insulator semiconductor (MIS) structure in contact with the body region including a gate contact; and a MIS conductive inversion channel along the surface of the body region in contact with the gate MIS structure. A lateral current conduction path may be formed in the resurf layer between the source region and the drain region connected by the MIS channel, where the lateral current conduction path is controlled by an applied gate source bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.