Method of processing a semiconductor wafer for manufacture of semiconductor device
US7452753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor wafer that has a first surface and a second surface opposite to the first surface. The method includes forming grooves of a predetermined depth on the second surface on which circuit patterns are formed, attaching a first surface of a protective tape to the second surface on which the grooves are formed, attaching a carrier tape to a second surface of the protective tape opposite to the first surface of the protective tape so that the first surface of the semiconductor wafer can be oriented upward, removing the first surface of the semiconductor wafer by a predetermined thickness and dividing the semiconductor wafer into chips by the grooves, and supplying each chip to a die bonder in the state where the first surface of the of the chip is oriented upward. Only one kind of die bonder is needed. A UV-type tape is not required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.