Method of forming a mask structure and method of forming a minute pattern using the same
US7452825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Jul 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the method of forming a mask structure, a first mask is formed on a substrate where the first mask includes a first mask pattern having a plurality of mask pattern portions having openings therebetween and a second mask pattern having a corner portion of which an inner side wall that is curved. A sacrificial layer is formed on the first mask. A hard mask layer is formed on the sacrificial layer. After the hard mask layer is partially removed until the sacrificial layer adjacent to the corner portion is exposed, a second mask is formed from the hard mask layer remaining in the space after removing the sacrificial layer. A minute pattern having a fine structure may be easily formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.