Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material

US7453672B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Bernard Dieny · Le Pont-de-Claix, FR
• Bernard Rodmacq · Saint-Égrève, FR
• Franck Ernult · Chofu, JP

Key dates

• Filing date: Oct 10, 2002
• Grant date: Nov 18, 2008
• Expiry date: Dec 10, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49044
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under the influence of a magnetic field, and comprising means of circulating a current in the spin valve transverse to the plane of the layers. The spin valve comprises at least one discontinuous dielectric or semiconducting layer in the stack, with electrically conducting bridges passing through the thickness of the dielectric or semiconducting layer, these bridges being designed to locally concentrate the current that passes transversely through the stack. Application particularly suitable for magnetic read heads, and random access memories.