Bernard Dieny
74Patents
21h-index
81Co-inventors
91Inventor score
Filing activity: Dec 11, 1990 → Feb 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5206590A | Magnetoresistive sensor based on the spin valve effect | Physics | 377 | Expired |
| US6532164B2 | Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device | Electricity | 243 | Expired |
| US6603677B2 | Three-layered stacked magnetic spin polarization device with memory | Emerging Cross-Sectional Technologies | 228 | Expired |
| US5159513A | Magnetoresistive sensor based on the spin valve effect | Physics | 203 | Expired |
| US5287238A | Dual spin valve magnetoresistive sensor | Physics | 184 | Expired |
| US8279666B2 | Spin polarised magnetic device | Electricity | 124 | Active |
| US6950335B2 | Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device | Electricity | 96 | Expired |
| US5301079A | Current biased magnetoresistive spin valve sensor | Physics | 74 | Expired |
| US5341261A | Magnetoresistive sensor having multilayer thin film structure | Physics | 53 | Expired |
| US6770382B1 | GMR configuration with enhanced spin filtering | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5574605A | Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7821818B2 | Magnetoresistive tunnel junction magnetic device and its application to MRAM | Electricity | 40 | Active |
| US6462641B1 | Magnetoresistor with tunnel effect and magnetic sensor using same | Physics | 38 | Expired |
| US6013365A | Multi-layer structure and sensor and manufacturing process | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7411817B2 | Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same | Physics | 36 | Active |
| US5598308A | Magnetoresistive sensor having multilayer thin film structure | Physics | 32 | Expired |
| US7453672B2 | Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7813202B2 | Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device | Emerging Cross-Sectional Technologies | 28 | Active |
| US7772659B2 | Magnetic device having perpendicular magnetization and interaction compensating interlayer | Physics | 27 | Active |
| US5677625A | Giant magnetoresistance, production process and application to a magnetic sensor | Emerging Cross-Sectional Technologies | 25 | Expired |
| US8208295B2 | Heat assisted magnetic write element | Electricity | 23 | Active |
| US6882509B2 | GMR configuration with enhanced spin filtering | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5635835A | Self biased multilayer magnetoresistance sensor | Electricity | 19 | Expired |
| US6888703B2 | Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads | Physics | 18 | Expired |
| US8513944B2 | Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element | Electricity | 15 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.