Patent · US Expired

Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories

US7455795B2 · kind B2 · utility

0Cited by

10References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Guenter Schmid · Hemhofen, DE
Peter Baeuerle · Ludwigsburg, DE
Elena Mean-Osteritz · Langenau, DE
Marcus Halik · Erlangen, DE
Hagen Klauk · Erlangen, DE

Key dates

Filing date	Dec 29, 2004
Grant date	Nov 25, 2008
Priority date	—
Expiry date	Apr 29, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10K85/311
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.