Compositions and methods for CMP of low-k-dielectric materials
US7456107B2 · kind B2 · utility
12Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.