Semiconductor device
US7456422B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 3, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Jun 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34373
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.