Light-emitting semiconductor device
US7456435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2004 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Nov 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
Abstract
A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.