Phase change random access memory (PRAM) device having variable drive voltages
US7457151B2 · kind B2 · utility
15Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Dec 29, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/009
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device of one aspect includes a memory array including a plurality of phase change memory cells, a write boosting circuit, and a write driver. The write boosting circuit boosts a first voltage and outputs a first control voltage in response to a control signal in a first operation mode, and boosts the first voltage and outputs a second control voltage in response to the control signal in a second operation mode and a third operation mode. The write driver is driven by the first control voltage in the first operation mode and writes data to a selected memory cell of the memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.