Method and system for repairing defected photomasks
US7459242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2002 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Feb 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/72
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method for repairing a photomask (52) for use in a photolithography process is disclosed, the photomask (52), consisting of a substrate layer (38) and a chrome layer (36) over the substrate layer (38), having a defect (42) in the chrome layer (36), the method comprising: providing a pulsed laser source (1) for generating an ultra-short pulsed laser beam; providing optical elements for scanning, directing and focusing the pulsed laser beam at a desired target location; directing the pulsed laser beam through the substrate and focusing it on a target location located inside the substrate adjacent the defect (42) to write a diffractive optical element (34), thus changing the scattering properties of the substrate at the target location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.