Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same
US7459246B2 · kind B2 · utility
8Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2007 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Jan 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.