Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method
US7459260B2 · kind B2 · utility
9Cited by
1References
27Claims
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Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Aug 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.