High voltage GaN-based transistor structure

US7459356B1 · kind B1 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• Joseph A. Smart · Mooresville, US
• Brook Hosse · Huntersville, US
• Shawn R. Gibb · Huntersville, US
• David Grider · Huntersville, US
• Jeffrey B. Shealy · Thousand Oaks, US

Key dates

• Filing date: Feb 23, 2006
• Grant date: Dec 2, 2008
• Expiry date: Aug 31, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.