Noble metal barrier and seed layer for semiconductors
US7459392B2 · kind B2 · utility
7Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Dec 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to prevent oxidation of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.