Juan E. Dominguez
28Patents
7h-index
29Co-inventors
65Inventor score
Filing activity: Aug 9, 2004 → Aug 21, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7220671B2 | Organometallic precursors for the chemical phase deposition of metal films in interconnect applications | Electricity | 46 | Expired |
| US7964174B2 | Nanotube growth and device formation | Emerging Cross-Sectional Technologies | 28 | Active |
| US7682891B2 | Tunable gate electrode work function material for transistor applications | Electricity | 16 | Active |
| US7635503B2 | Composite metal films and carbon nanotube fabrication | Emerging Cross-Sectional Technologies | 13 | Active |
| US7354849B2 | Catalytically enhanced atomic layer deposition process | Electricity | 8 | Expired |
| US7459392B2 | Noble metal barrier and seed layer for semiconductors | Electricity | 7 | Expired |
| US7851360B2 | Organometallic precursors for seed/barrier processes and methods thereof | Electricity | 7 | Active |
| US8319287B2 | Tunable gate electrode work function material for transistor applications | Electricity | 6 | Active |
| US7687911B2 | Silicon-alloy based barrier layers for integrated circuit metal interconnects | Electricity | 5 | Active |
| US7858525B2 | Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill | Electricity | 4 | Active |
| US8222746B2 | Noble metal barrier layers | Electricity | 4 | Active |
| US7964746B2 | Copper precursors for CVD/ALD/digital CVD of copper metal films | Chemistry; Metallurgy | 3 | Active |
| US7550385B2 | Amine-free deposition of metal-nitride films | Electricity | 3 | Expired |
| US8425987B2 | Surface charge enhanced atomic layer deposition of pure metallic films | Chemistry; Metallurgy | 2 | Active |
| US7625817B2 | Method of fabricating a carbon nanotube interconnect structures | Emerging Cross-Sectional Technologies | 2 | Active |
| US7476615B2 | Deposition process for iodine-doped ruthenium barrier layers | Electricity | 2 | Active |
| US7749906B2 | Using unstable nitrides to form semiconductor structures | Emerging Cross-Sectional Technologies | 2 | Active |
| US7435679B2 | Alloyed underlayer for microelectronic interconnects | Electricity | 1 | Expired |
| US7507521B2 | Silicon based optically degraded arc for lithographic patterning | Electricity | 1 | Expired |
| US10790257B2 | Active package substrate having anisotropic conductive layer | Electricity | 1 | Active |
| US7704895B2 | Deposition method for high-k dielectric materials | Electricity | 1 | Active |
| US11145632B2 | High density die package configuration on system boards | Electricity | 1 | Active |
| US10497669B2 | Hybrid die stacking | Electricity | 0 | Active |
| US8344352B2 | Using unstable nitrides to form semiconductor structures | Emerging Cross-Sectional Technologies | 0 | Active |
| US7687225B2 | Optical coatings | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.