Method for manufacturing probe structure of probe card
US7459399B2 · kind B2 · utility
3Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2007 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/06711
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.