Ion implant beam angle integrity monitoring and adjusting
US7459703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24528
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.