Semiconductor image device package with die receiving through-hole and method of the same
US7459729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Feb 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a structure of package including: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.