Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
US7462505B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | May 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.