Silicon carbide semiconductor device and process for producing the same
US7462540B2 · kind B2 · utility
4Cited by
13References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jun 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film (2) formed on a silicon carbide substrate (1), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer (5) on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer (5) and at a temperature higher than in the step of forming the carbon layer (5).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.