Process of physical vapor depositing mirror layer with improved reflectivity
US7462560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Mar 18, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.