Contact structure formed using supercritical cleaning fluid and ALCVD
US7462561B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Inventors
Key dates
| Filing date | Jan 27, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jan 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A supercritical fluid such as CO2 cleans an opening formed in a Si-containing dielectric material and removes polymeric and organic residue produced by the etching process used to form the opening. The opening may be a contact, via or other opening and may include a cross-sectional area of less than 0.2 or 0.1 micron square. Atomic layer chemical vapor deposition (ALCVD) is used to form a thin barrier layer within the opening after the supercritical cleaning. A conductive material is formed over the barrier layer to provide a contact structure with improved contact resistance in VLSI devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.