Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation
US7462844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Mar 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.