Transistor using an isovalent semiconductor oxide as the active channel layer
US7462862B2 · kind B2 · utility
3,939Cited by
7References
30Claims
0Family size
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Key dates
| Filing date | Oct 25, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Dec 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.