Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer

US7462878B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Markus Richter · Neutraubling, DE
• Franz Eberhard · Kilchberg, CH
• Peter Holzer · Obertraubling, DE
• Ewald Guenther · Regenstauf, DE

Key dates

• Filing date: Sep 23, 2005
• Grant date: Dec 9, 2008
• Expiry date: Aug 10, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8516

Abstract

Disclosed is a light-emitting diode chip comprising a semiconductor layer sequence suitable for emitting primary electromagnetic radiation and further comprising a converter layer that is applied to at least one main face of the semiconductor layer sequence and comprises at least one phosphor suitable for converting a portion of the primary radiation into secondary radiation, at least a portion of the secondary radiation and at least a portion of the unconverted primary radiation overlapping to form a mixed radiation with a resulting color space. The converter layer is purposefully structured to adjust a dependence of the resulting color space on viewing angle. Also disclosed is a method of making a light-emitting diode chip in which a converter layer is purposefully structured.