Semiconductor device having an interconnect with sloped walls and method of forming the same
US7462891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Sep 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.