Indented structure for encapsulated devices and method of manufacture
US7462931B2 · kind B2 · utility
7Cited by
9References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 15, 2006 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jan 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.